Category | Discrete Semiconductor Products |
---|---|
Family | MOSFETs - Single |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 6A, 10V |
Drain to Source Voltage (Vdss) | 100V |
Gate Charge (Qg) @ Vgs | 20nC @ 5V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Input Capacitance (Ciss) @ Vds | 440pF @ 25V |
FET Polarity | N-Channel |
FET Feature | Logic Level Gate |
Power - Max | 3.8W |
Mounting Type | Through Hole |
Package / Case | TO-262-3 (Straight Leads) |
Packaging | Tube |