Category | Discrete Semiconductor Products |
---|---|
Family | MOSFETs - Single |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 21A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Gate Charge (Qg) @ Vgs | 35nC @ 4.5V |
Current - Continuous Drain (Id) @ 25° C | 105A |
Input Capacitance (Ciss) @ Vds | 2840pF @ 15V |
FET Polarity | N-Channel |
FET Feature | Logic Level Gate |
Power - Max | 110W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |