Category | Discrete Semiconductor Products |
---|---|
Family | MOSFETs - Single |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 6.6A, 10V |
Drain to Source Voltage (Vdss) | 150V |
Gate Charge (Qg) @ Vgs | 66nC @ 10V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Input Capacitance (Ciss) @ Vds | 860pF @ 25V |
FET Polarity | P-Channel |
FET Feature | Standard |
Power - Max | 110W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |