Category | Discrete Semiconductor Products |
---|---|
Family | Transistors (BJT) - Single, Pre-Biased |
Series | - |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10K |
Resistor - Emitter Base (R2) (Ohms) | 4.7K |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 125mW |
Transistor Type | NPN - Pre-Biased |
Mounting Type | Surface Mount |
Package / Case | SS Mini 3P |
Packaging | Cut Tape (CT) |